aptml1002u60r020t3ag aptml1002u60r020t3ag ? rev 1 march, 2010 www.microsemi.com 1 ? 3 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 pins 13/14 ; 29/30 ; 31/32 must be shorted together absolute maximum ratings (per leg) n in saturation mode these devices are sensitive to electrosta tic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdo wn voltage 1000 v t c = 25c 20 i d continuous drain current t c = 80c 14 i dm pulsed drain current 74 a v gs gate - source voltage 30 v r dson drain - source on resistance 720 m p d maximum power dissipation n t c = 25c 520 w application ? electronic load dedicated to power supplies and battery discharge testing features ? linear mosfet ? very low stray inductance ? internal thermistor fo r temperature monitoring ? high level of integration ? aln substrate for improved thermal performance benefits ? direct mounting to heatsink (isolated package) ? easy series and parallels combinations for power and voltage improvements ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant linear mosfet power module v dss = 1000v r dson = 600m typ @ tj = 25c i d = 20a @ tc = 25c
aptml1002u60r020t3ag aptml1002u60r020t3ag ? rev 1 march, 2010 www.microsemi.com 2 ? 3 all ratings @ t j = 25c unless otherwise specified electrical characteristics (per leg) symbol characteristic test conditions min typ max unit v ds = 1000v ; v gs = 0v t j = 25c 250 i dss zero gate voltage drain current v ds = 800v ; v gs = 0v t j = 125c 1000 a r ds(on) drain ? source on resistance v gs = 10v, i d = 10a 600 720 m v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 2 4 v i gss gate ? source leakage current v gs = 30 v 100 na dynamic characteristics (per leg) symbol characteristic test conditions min typ max unit c iss input capacitance 6000 c oss output capacitance 775 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 285 pf shunt electrical characteristics (per leg) symbol characteristic min typ max unit r sh resistance value 20 m t sh tolerance 2 % t c =25c 20 p sh load capacity t c =80c 10 w t c =25c 31 i sh current capacity t c =80c 22 a temperature sensor ptc symbol characteristic min typ max unit r 25 resistance @ 25c 1980 2020 r 100 /r 25 resistance ratio tamb=100c & 25c 1.676 1.696 1.716 r -55 /r 25 resistance ratio tamb=-55c & 25c 0.48 0.49 0.50 b temperature coefficient 7900 ppm/k thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance mosfet (per leg) 0.24 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g
aptml1002u60r020t3ag aptml1002u60r020t3ag ? rev 1 march, 2010 www.microsemi.com 3 ? 3 sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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